Micron Technology, today announced that it has begun mass production of the world’s first 232-layer NAND, built with industry-leading innovations to push exceptional performance in storage solutions. The new 232-layer NAND produces greater capacity and better power efficiency than previous NAND eras to support best-in-class support for notable data-intensive use cases, from client to cloud. It features the highest surface density in the industry.
Micron Delivers World’s First 232-Layer NAND and Expands Technology Leadership
Micron’s 232-layer NAND is a watershed moment for storage innovation as the first evidence of the ability to scale 3D NAND to over 200 layers in production. This groundbreaking technology required many innovations, including advanced process capabilities to create high aspect ratio structures, new advanced materials, and state-of-the-art design improvements that build on our industry-leading 176-layer NAND technology. of the market.
— Scott DeBoer, executive vice president of technology and products, Micron
State-of-the-art technology delivers unparalleled performance
Micron’s 232-layer NAND technology provides the high-performance storage required to support the cutting-edge solutions and real-time services needed in data centers and automotive applications, as well as responsive and immersive experiences on mobile devices, l consumer electronics and consumer computer systems. .
This technology node enables the introduction of the industry’s fastest I/O speed – 2.4 gigabytes per second (GB/s) – to meet the low latency and high throughput requirements of data-centric workloads. data such as AI and machine learning, unstructured databases, and real-time analytics and cloud computing. This speed is twice the data transfer speeds of the fastest interface enabled on Micron’s 176-layer node. Micron 232-layer NAND also offers up to 100% more write bandwidth and more than 75% more read bandwidth per chip than the previous generation. These benefits translate into performance and power efficiency gains in SSDs and embedded NAND solutions.
Micron’s 232-layer NAND also features the world’s first production six-plane TLC. It has the highest number of shots per die of any TLC flash and offers self-contained playback capability in each shot. High I/O speed, read and write latency, and six-plane architecture deliver best-in-class data transfers in multiple formats. This structure ensures less frequent collisions between read and write commands and results in system-level QoS improvements.
Micron’s 232-layer NAND is the first in production to enable NV-LPDDR4, a low-voltage interface that offers over 30% per-bit transfer savings over previous I/O interfaces. The company’s 232-layer NAND solutions provide ideal support for mobile applications and deployments in the data center and intelligent edge that need to offset improved performance with reduced power. The interface is also backward compatible to support legacy systems and controllers.
The compact 232-layer NAND form factor provides customers with flexibility in their designs while enabling the highest TLC density per square millimeter ever produced (at 14.6 Gb/mm²). The areal density is between thirty-five and one hundred percent higher than competing TLC products currently on the market. Coming in a new 11.5mm x 13.5mm package, the new 232-layer NAND features a 28% smaller package size than previous generations, making it the smallest high-density NAND available. More density in a smaller footprint minimizes board space for a diverse set of deployments.
Next-generation NAND enables innovation in all markets
Micron has maintained its technology leadership with successive market advancements in NAND layer count that deliver benefits such as longer battery life and more compact storage for mobile devices, better performance in cloud computing and faster training of AI models. Our 232-layer NAND is the new foundation and standard for end-to-end storage innovation that underpins digital transformation across industries.
— Sumit Sadana, Chief Commercial Officer, Micron
The development of 232-layer NAND is the result of Micron’s leadership in research, development and technological advancements. The breakthrough capabilities of this NAND will enable customers to deliver more innovative solutions in data centers, thinner and lighter laptops, the latest mobile devices and across the intelligent edge.
Micron’s 232-layer NAND is now in mass production at the company’s Singapore facility. It initially ships to customers in component form and through its Crucial SSD consumer product line. Further product and availability announcements will follow.
Source of information: Micron